| PART |
Description |
Maker |
| PE4230 PE4230-EK 4230-52 4230 4230-00 4230-21 4230 |
SPDT High Power UltraCMOSRF Switch
SPDT High Power UltraCMOS RF Switch
SPDT High Power UltraCMOS⑩ RF Switch
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| TGS4301-EPU |
SPDT VPIN
High Power Ka-Band Absorptive SPDT Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| CXG1045N |
High Power DPDT Switch for GSM
|
http://
SONY[Sony Corporation]
|
| CXG1104TN |
High Power Antenna Switch MMIC(SPDT Switch with Logic Control)For Use In Cellular Handsets(大功率天线开关微波集成电带逻辑控制的单刀双掷开关，用于蜂窝式手机）) 高功率天线单片开关（单刀双掷开关逻辑控制），用于蜂窝手机的使用（大功率天线开关微波集成电路（带逻辑控制的单刀双掷开关，用于蜂窝式手机）
High Power SPDT Switch with Logic Control
|
Sony, Corp.
|
| MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
|
| MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| CXG1195XR |
High Power SP5T Antenna Switch MMIC for GSM/UMTS Dual Mode
|
Sony Corporation
|
| MASW-000105 |
GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| STPA003 STPA003CD-48X STPA003HSD-48X STPA003OD-4WX |
Low voltage operation, high sound quality BTL output power amplifier with excellent GSM noise immunity, clip and offset detection
|
ST Microelectronics
|
